XS-PT02D07-600

We can provide customers with special light output chip led. Can adapt to a variety of sizes of infrared touch screen applications. Support single point, multi-touch customer needs.

PRODUCT MANUALRETURN >>

FEATURES

Peak wavelength λp=940nm

Low forward voltage

Pb free

Meet ROHS standards

Compatible With Infrared Reflow Solder Process. 

APPLICATION

Infrared applied system

Copier

High speed photo detector

Game machine

 

 

ELECTRICAL PERFORMANCE CHARACTERISTICS

project symbol Maximum rating unit Ambient temperature
Power dissipation Pd 75 mW Ta=25℃
Collector-Emitter Voltage VCEO 30 V Ta=25℃
Emitter-Collector-Voltage VCEO 3.5 V Ta=25℃
Operating temperature TOPR -30℃ to+85℃ -
storage temperature TSTG -40℃ to+100℃ -
Soliering temperature TSOL 260℃ for 5sec -

LIGHT PERFORMANCE CHARACTERISTICS

project symbol condition Minimal average maximum unit
Rang Of Spectral Bandwidth λ 10% of λp 700 - 1100 nm
View Angle θ1/2 V R =5V - 90 - Deg
Peak Wavelength 入P - - 940 - nm
On State Collector Current IC(ON)
VCE=5V Ee=1mW/cm2
λP=940nm
- 3 - mA
Collector Dark Current ICEO
VCE=10V
Ee=0mW/cm2
- 100   nA
Collector-Emitter Breakdown Voltage BVCEO
IC =100μA
Ee=0mW/cm2
30 - - V
Emitter-Collector Breakdown Voltage BVECO
IC =10μA
Ee=0mW/cm2
3.5 - - V
Collector-Emitter Saturation Voltage VCE(sat)
IC=2mA
IB=100uA
- - 0.2 V

 

 

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