SE03-HP6070H

PRODUCT MANUALRETURN >>

FEATURES

High radiation intensity

Suitable for SMT assembly

High output power at 850nm

 

APPLICATION

Infrared date transmission

Infrared illumination for night

Infrared illumination for night

 

ELECTRICAL PERFORMANCE CHARACTERISTICS

project symbol Maximum rating unit Ambient temperature
Power dissipation Pd 1.9 W Ta=25℃
Forward current IF ≤1000 mA Ta=25℃
Reverse voltage VR 5 V Ta=25℃
Operating temperature TOPR -30℃ to+85℃ -
storage temperature TSTG -40℃ to+100℃ -
Soliering temperature TSOL 260℃ for 5sec -

LIGHT PERFORMANCE CHARACTERISTICS

project symbol condition Minimal average maximum unit
Radiant flux Φ IF=350mA 200 - 220 mW
Half  Angle θ1/2 - - 120 - Deg
Peak Wavelength 入P IF=350mA 840 850 870 nm
Spectral Bandwidth △入 IF=350mA - 30 - nm
Forward voltage VF IF=350mA 1.5 1.7 V
Reverse current IP VR=5.0V - - 10 uA

 

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